The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Oct. 04, 2017
Applicant:

King Abdullah University of Science and Technology, Thuwal, SA;

Inventors:

Mohamed Tarek Ghoneim, Mohandessin, EG;

Muhammad Mustafa Hussain, Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 21/762 (2006.01); H01L 23/373 (2006.01); H01L 23/367 (2006.01); F28F 21/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4871 (2013.01); F28F 21/089 (2013.01); H01L 21/762 (2013.01); H01L 23/3672 (2013.01); H01L 23/3736 (2013.01);
Abstract

A method of fabricating a thermal management device. The method includes depositing a seed layer, using a seed layer depositing technique, on a side of a support base; growing a heat sink base layer on a side of the seed layer; depositing a hard mask on a side of the support base directly opposite that containing the seed and heat sink base layers; patterning the hard mask with a photoresist mask; etching the patterned hard mask with an etching technique, wherein the etching creates trenches in the underlying support base, exposing the seed layer; removing the hard mask with a hard mask removal technique; depositing a layer of photoresist on the heat sink base layer; growing heat sinks using a heat sink growth technique on the exposed seed layer; removing the photoresist layer with a photoresist layer removal technique; and removing the support base with a support base removal technique.


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