The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Jul. 04, 2016
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/205 (2006.01); H01L 21/225 (2006.01); G03F 7/20 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28035 (2013.01); G03F 7/20 (2013.01); H01L 21/02 (2013.01); H01L 21/02104 (2013.01); H01L 21/2053 (2013.01); H01L 21/2257 (2013.01); H01L 22/10 (2013.01); H01L 22/12 (2013.01); H01L 22/14 (2013.01); H01L 22/34 (2013.01); H01L 28/20 (2013.01);
Abstract
Polysilicon films (P,P) are simultaneously formed on a wafer (W) and a monitor wafer (W) under the same growth condition in a wafer process. At least one of a film thickness and phosphorus concentration of the polysilicon film (P) formed on the monitor wafer (W) is measured to obtain a measured value. One of a plurality of mask patterns (A,B,C) is selected based on the measured value. The polysilicon film (P) formed on the wafer (W) is etched using the selected mask pattern to form the polysilicon resistor ().