The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Aug. 23, 2017
Northeastern University, Boston, MA (US);
Anthony Vargas, Somerville, MA (US);
Fangze Liu, Shijiazhuang, CN;
Christopher Adrian Lane, Boston, MA (US);
Daniel Rubin, Boston, MA (US);
Swastik Kar, Belmont, MA (US);
Arun Bansil, Dover, MA (US);
Gianina Buda, Cambridge, MA (US);
Zachariah Hennighausen, Boston, MA (US);
Northeastern University, Boston, MA (US);
Abstract
Heterocrystals of metal dichalcogenides and BiS, BiSeor BiTeare presented, in which the metal dichalcogenides and BiS, BiSeor BiTedo not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.