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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11293101 B1

PDFFull Text
Date of Patent:
Apr. 05, 2022

Filed:

Mar. 19, 2019

Method based on multi-source deposition for fabricating perovskite film

Applicant:

Okinawa Institute of Science and Technology School Corporation, Okinawa, JP;

Inventors:

Yabing Qi, Kunigami-gun, JP;

Luis Ono, Kunigami-gun, JP;

Shenghao Wang, Kunigami-gun, JP;

Assignee:

OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION, Kunigami-gun, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Bret P Chen

Int. Cl.
CPC ...
C23C 14/08 (2006.01); C23C 14/24 (2006.01); C23C 16/52 (2006.01); C23C 14/06 (2006.01); C23C 14/12 (2006.01); C23C 14/50 (2006.01); C23C 14/54 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); H01L 31/0256 (2006.01); H01L 51/00 (2006.01); H01L 51/42 (2006.01); C07F 7/22 (2006.01); C07F 7/24 (2006.01);
U.S. Cl.
CPC ...
C23C 16/52 (2013.01); C23C 14/0694 (2013.01); C23C 14/12 (2013.01); C23C 14/24 (2013.01); C23C 14/243 (2013.01); C23C 14/505 (2013.01); C23C 14/542 (2013.01); C23C 16/40 (2013.01); C23C 16/45502 (2013.01); C23C 16/46 (2013.01); H01L 31/0256 (2013.01); C07F 7/22 (2013.01); C07F 7/24 (2013.01); H01L 51/0008 (2013.01); H01L 51/0029 (2013.01); H01L 51/4226 (2013.01);
Abstract

A method for fabricating a perovskite film includes the steps of: placing a substrate on a substrate stage in a chamber, the substrate stage configured to rotate around its central axis at a rotation speed; depositing first source materials on the substrate from a first set of evaporation units, each coupled to the side section or the bottom section of the chamber; depositing second source materials on the substrate from a second set of evaporation units coupled to the bottom section, wherein the chamber includes a shield defining two or more zones having respective horizontal cross-sectional areas, which are open and facing the substrate, designated for the two or more evaporation units in the second set. The perovskite film includes multiple unit layers each being formed by one rotation of the substrate stage, and having composition and thickness thereof controlled by adjusting evaporation rates, rotation speed and horizontal cross-sectional areas.

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