The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Mar. 02, 2021
Applicant:

Government of the United States, As Represented BY the Secretary of the Air Force, Wright-Patterson AFB, OH (US);

Inventors:

Gary Cook, Beavercreek, OH (US);

Ronald W. Stites, Beavercreek, OH (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 31/02 (2006.01); C09K 11/88 (2006.01); G01T 1/20 (2006.01); H01S 3/16 (2006.01);
U.S. Cl.
CPC ...
C09K 11/883 (2013.01); G01T 1/20 (2013.01); H01S 3/16 (2013.01);
Abstract

A method of treating a substrate comprises applying an electric field to a substrate comprising a layer of a dopant on at least one surface; applying a predetermined temperature to the substrate in the electric field; applying the electric field and the predetermined temperature for a time sufficient to induce migration of the dopant into the substrate to provide a doped substrate; and removing the electric field and returning the doped substrate to about room temperature, wherein the doped substrate is characterized in that a spectral laser output of the doped substrate exhibits a nominally single frequency having a linewidth less than about 5 nm. The substrate may be a glass material, a single crystal material, a poly-crystalline material, a ceramic material, or a semiconductor material, which may be optically transparent. Before treatment, the substrate may be an undoped substrate or a doped substrate.


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