The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Dec. 28, 2018
Siemens Aktiengesellschaft, Munich, DE;
Andreas März, Leinburg, DE;
Mark-Matthias Bakran, Erlangen, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
In a method for protecting a field-effect transistor, which is operated in a switching mode, against an overload current in a switched-on switching state, an electric drain-source voltage between a drain connection and a source connection of the field-effect transistor is detected. The drain-source voltage is compared with a predefined voltage comparison value, and the field-effect transistor is switched into a switched-off switching state in the event that the drain-source voltage is greater than the voltage comparison value. For the purpose of providing a temperature compensation of the protection, the temperature of the field-effect transistor is detected; and the voltage comparison value is adjusted depending on the temperature. The voltage comparison value is, in addition, also dependent on time during the switched-on switching state.