The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Jun. 22, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Douglas Max Gill, South Orange, NJ (US);

Martin O. Sandberg, Ossining, NY (US);

Vivekananda P. Adiga, Ossining, NY (US);

Yves Martin, Ossining, NY (US);

Hanhee Paik, Danbury, CT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/02 (2006.01); H01L 39/22 (2006.01); H01L 27/18 (2006.01); H01L 39/24 (2006.01); H01L 39/12 (2006.01);
U.S. Cl.
CPC ...
H01L 39/025 (2013.01); H01L 27/18 (2013.01); H01L 39/223 (2013.01); H01L 39/2493 (2013.01); H01L 39/12 (2013.01);
Abstract

A method for improving lifetime and coherence time of a qubit in a quantum mechanical device is provided. The method includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit having capacitor pads. The method further includes at least one of removing an amount of substrate material from the backside of the substrate at an area opposite the at least one qubit or depositing a superconducting metal layer at the backside of the substrate at the area opposite the at least one qubit to reduce radiofrequency electrical current loss due to at least one of silicon-air (SA) interface, metal-air (MA) interface or silicon-metal (SM) interface so as to enhance a lifetime (T1) and a coherence time (T2) in the at least one qubit.


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