The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Jun. 16, 2020
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
The present disclosure relates to a semiconductor structure. The semiconductor structure comprises a semiconductor layer, a first carbon nanotube, and a second carbon nanotube. The semiconductor layer comprises an N-type semiconductor layer and a P-type semiconductor layer stacked with each other. The first carbon nanotube is on a first surface of the semiconductor layer. The second carbon nanotube is on a second surface of the semiconductor layer. A first extending direction of the first carbon nanotube intersects with a second extending direction of the second carbon nanotube. At an intersection of the first carbon nanotube and the second carbon nanotube, and in a direction perpendicular to the semiconductor layer, a multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor layer, and the second carbon nanotube.