The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Jul. 11, 2019
Applicant:
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong, CN;
Inventor:
Qianyi Zhang, Guangdong, CN;
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); H01L 29/66742 (2013.01); H01L 29/7869 (2013.01);
Abstract
A thin film transistor substrate and its manufacturing method are provided. The thin film transistor substrate avoids semiconductor defects caused by acid corrosion of a metal oxide channel during an etching process of forming a source/drain electrode, and effectively prevents copper from diffusing downward into the metal oxide channel under high temperature conditions. Such configuration eliminates a need to additionally use a barrier material, reduces production costs, and prevents short-circuiting resulting from a residual barrier material.