The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
May. 14, 2020
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventor:
Byounggun Choi, Daejeon, KR;
Assignee:
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7838 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01);
Abstract
Provided is a field effect transistor including a semiconductor layer, a gate electrode provided on a channel region in the semiconductor layer, and a channel adjusting member provided adjacent to the channel region on one surface of the semiconductor layer and overlapping the gate electrode on a plane. Here, the channel adjusting member provides a depletion layer in the channel region.