The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Mar. 14, 2019
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Sen Huang, Beijing, CN;
Xinhua Wang, Beijing, CN;
Xinyu Liu, Beijing, CN;
Yuankun Wang, Beijing, CN;
Haibo Yin, Beijing, CN;
Ke Wei, Beijing, CN;
Abstract
A GaN-based superjunction vertical power transistor and a manufacturing method thereof. The transistor includes: a N-GaN layer; a first P-GaN layer as a current blocking layer, formed on the N-GaN layer and having a gate region window; and a thin barrier Al(In, Ga)N/GaN heterostructure conformally formed on the current blocking layer and filling the bottom and one or more sidewalls of the gate region window, wherein the N-GaN layer has an etched groove completely or partially filled with a second P-type GaN layer, an N-GaN layer is formed under the second P-type GaN layer, and the N-GaN layer is in direct contact with the second P-type GaN layer and the N-GaN layer to form a superjunction composite structure.