The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Sep. 08, 2020
Applicant:

Argo Ai, Llc, Pittsburgh, PA (US);

Inventors:

Brian Piccione, Yardley, PA (US);

Mark Itzler, Princeton, NJ (US);

Xudong Jiang, Princeton, NJ (US);

Krystyna Slomkowski, Parlin, NJ (US);

Harold Y. Hwang, Plainsboro, NJ (US);

John L. Hostetler, Highstown, NJ (US);

Assignee:

Argo Al, LLC, Pittsburgh, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14665 (2013.01); H01L 27/1463 (2013.01); H01L 27/14685 (2013.01); H01L 27/14694 (2013.01);
Abstract

Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.


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