The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Jul. 02, 2020
Applicant:
Wuxi Petabyte Technologies Co., Ltd., Wuxi, CN;
Inventor:
Yushi Hu, McLean, VA (US);
Assignee:
WUXI PETABYTE TECHNOLOGIES CO, LTD., Jiangsu, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11597 (2017.01); H01L 27/11514 (2017.01); H01L 49/02 (2006.01); H01L 27/11502 (2017.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11597 (2013.01); H01L 27/11502 (2013.01); H01L 27/11514 (2013.01); H01L 28/55 (2013.01); H01L 28/88 (2013.01); H01L 28/92 (2013.01); H01L 29/40111 (2019.08); H01L 29/516 (2013.01);
Abstract
Embodiments of ferroelectric memory devices and methods for forming the ferroelectric memory devices are disclosed. In an example, a ferroelectric memory cell includes a first electrode, a second electrode, a ferroelectric layer disposed between the first electrode and the second electrode, and a recess between a side surface of at least one of the first electrode or the second electrode and a side surface of the ferroelectric layer.