The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Apr. 12, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seonghwa Park, Seoul, KR;
Hongbae Park, Seoul, KR;
Jaehyun Lee, Hwaseong-si, KR;
Jonghan Lee, Namyangju-si, KR;
Dabok Jeong, Hwaseong-si, KR;
Minseok Jo, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern and the second gate pattern being spaced apart from each other, and a separation pattern that separates the first gate pattern and the second gate pattern from each other. The first gate pattern includes a first high-k dielectric pattern and a first metal-containing pattern on the first high-k dielectric pattern, the first metal-containing pattern covering a sidewall of the first high-k dielectric pattern. The second gate pattern includes a second high-k dielectric pattern and a second metal-containing pattern on the second high-k dielectric pattern, and the separation pattern is in direct contact with the first metal-containing pattern and spaced apart from the first high-k dielectric pattern.