The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Mar. 30, 2020
Applicant:
Denso Corporation, Kariya, JP;
Inventors:
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 29/0638 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01);
Abstract
In a semiconductor device in which an IGBT region having an IGBT element and an FWD region having an FWD element are formed to a semiconductor substrate, a plurality of carrier injection layers electrically connected with a second electrode and configuring a PN junction with a field stop layer is disposed in a cathode layer. When an impurity concentration of the field stop layer is defined as Nfs [cm], and a length of a shortest portion of each of the plurality of carrier injection layers along a planar direction of the semiconductor substrate is defined as L[μm], the plurality of carrier injection layers satisfies a relationship of L>6.8×10×Nfs+20.