The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Apr. 02, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Takahiro Tanamachi, Yokkaichi, JP;

Shuya Hatao, Yokkaichi, JP;

Hidetoshi Nakamoto, Yokkaichi, JP;

Michimoto Kaminaga, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/10 (2006.01); H01L 27/11556 (2017.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01); H01L 23/532 (2006.01); H01L 27/11582 (2017.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 23/10 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53209 (2013.01); H01L 23/53295 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor die includes semiconductor devices located over a substrate, at least one dielectric material portion that laterally surrounds the semiconductor devices, and interconnect-level dielectric material layers. At least one edge seal ring structure can be provided, each including a composite edge seal via structure and a set of metal barrier structures. The composite edge seal via structure includes a metallic material layer and a dielectric fill material portion. Alternatively or additionally, at least one slit ring structure can laterally surround the semiconductor devices and the metal interconnect structures. Each slit ring structure continuously extends through each of the interconnect-level dielectric material layers and into the at least one dielectric material portion, and includes at least one dielectric material.


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