The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Nov. 07, 2019
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Junjing Bao, San Diego, CA (US);

Ye Lu, San Diego, CA (US);

Haitao Cheng, San Diego, CA (US);

Assignee:

Qualcomm Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/64 (2006.01); H01L 29/06 (2006.01); H01L 49/02 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01); H01L 28/10 (2013.01); H01L 28/40 (2013.01); H01L 29/0649 (2013.01);
Abstract

Certain aspects of the present disclosure generally relate to a semiconductor device including an air gap underneath passive devices. The semiconductor device generally includes a substrate layer, a passive device layer, and a dielectric layer disposed between the substrate layer and the passive device layer, wherein the dielectric layer includes an air gap disposed beneath at least one passive device in the passive device layer.


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