The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Aug. 27, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/167 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 21/322 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2251 (2013.01); H01L 21/02373 (2013.01); H01L 21/02532 (2013.01); H01L 21/02634 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 21/3225 (2013.01); H01L 29/167 (2013.01); H01L 27/14687 (2013.01);
Abstract
An epitaxial wafer and a method of fabricating an epitaxial wafer, the method including providing a semiconductor substrate doped with both boron and germanium such that a sum of boron concentration and germanium concentration is at least 8.5E+18 atoms/cmand the germanium concentration is 6 times or less the boron concentration; forming an epitaxial layer on the semiconductor substrate such that the semiconductor substrate and the epitaxial layer constitute the epitaxial wafer; and annealing the epitaxial wafer for 1 hour or longer at a temperature of 1,000° C. or less.