The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
May. 09, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hyung Jun Kim, Suwon-si, KR;
Kwang Nam Kim, Suwon-si, KR;
Sung Yeon Kim, Jeongeup-si, KR;
Jong Woo Sun, Hwaseong-si, KR;
Sang Rok Oh, Yongin-si, KR;
Jung Pyo Hong, Gwangmyeong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); H01J 37/321 (2013.01); H01J 37/32816 (2013.01);
Abstract
A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.