The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Aug. 09, 2018
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Shusaku Hayashi, Chiyoda-ku, JP;

Koichi Akiyama, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/225 (2006.01); G02B 6/293 (2006.01); G02B 6/12 (2006.01); G02F 1/21 (2006.01);
U.S. Cl.
CPC ...
G02F 1/2257 (2013.01); G02B 6/29344 (2013.01); G02F 1/2255 (2013.01); G02B 2006/12142 (2013.01); G02F 1/212 (2021.01); G02F 2201/127 (2013.01);
Abstract

A semiconductor optical modulator includes a modulation region and a non-modulation region. A first width of a first ground electrode in the non-modulation region is larger than a second width of the first ground electrode in the modulation region. A third width of a second ground electrode in the non-modulation region is larger than a fourth width of the second ground electrode in the modulation region. In the non-modulation region, a first insulating layer is disposed between a first optical waveguide and a first traveling wave electrode and between a second optical waveguide and a second traveling wave electrode. For this reason, a bandwidth of the semiconductor optical modulator can be widened.


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