The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Sep. 05, 2017
Applicant:
Agency for Science, Technology and Researchy, Singapore, SG;
Inventors:
Kwang Wei Joel Yang, Singapore, SG;
Zhaogang Dong, Singapore, SG;
Ramon Paniagua-Dominguez, Singapore, SG;
Arseniy Kuznetsov, Singapore, SG;
Yefeng Yu, Singapore, SG;
Assignee:
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 1/10 (2015.01); G02B 1/118 (2015.01); B82Y 40/00 (2011.01); B81C 1/00 (2006.01); G02B 1/115 (2015.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G02B 1/118 (2013.01); B81C 1/00031 (2013.01); B81C 1/00388 (2013.01); B82Y 40/00 (2013.01); G02B 1/115 (2013.01); G03F 7/0002 (2013.01); H01L 21/0271 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); B81C 2201/0149 (2013.01);
Abstract
This application relates to a method of forming nano-patterns on a substrate comprising the step of forming a plurality of nanostructures on a dielectric substrate, wherein the nanostructures are dimensioned or spaced apart from each other by a scaling factor of the dielectric substrate with reference to a silicon substrate.