The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Feb. 12, 2019
Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Centre National DE LA Recherche Scientifique, Paris, FR;

Universite Claude Bernard Lyon 1, Villeurbanne, FR;

Cpe Lyon Formation Continue ET Recherche, Villeurbanne, FR;

Inventors:

Stéphane Cadot, Genay, FR;

Francois Martin, Grenoble, FR;

Elsje Quadrelli, Lyons, FR;

Chloé Thieuleux, Villeurbanne, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); C23C 16/46 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
C23C 16/305 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); C23C 16/46 (2013.01); C23C 16/56 (2013.01); C23C 16/4408 (2013.01);
Abstract

A method of preparing a crystalline thin film having a formula MYincludes (1) preparing an MYamorphous film by atomic layer deposition on a surface of a substrate, and (2) annealing the amorphous MYfilm at 350° C. or more to provide the crystalline MYfilm. The amorphous MYfilm is formed from at least one metal M precursor and at least one element Y precursor, wherein x is 1.5 to 3.1, M is tungsten or molybdenum, and Y is sulfur or selenium. Step (1) includes a) introducing a first metal M precursor or element Y precursor into a deposition chamber, b) purging with inert gas, c) introducing a second metal M precursor when the first precursor is element Y, or element Y precursor when the first precursor is metal M, d) purging with inert gas, e) repeating steps a) to d), and f) obtaining the amorphous MYfilm.


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