The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Apr. 21, 2021
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventor:

Sho Nakagawa, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/06 (2006.01); H02M 3/07 (2006.01); H03K 17/687 (2006.01); H02M 1/08 (2006.01); H03K 19/20 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H02M 1/08 (2013.01); H03K 19/20 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0081 (2013.01);
Abstract

A semiconductor device, including a power supply terminal, an output terminal, a ground terminal, an N-channel main MOSFET connected between the power supply terminal and the output terminal, a drive circuit which operates to drive the main MOSFET, using a potential difference, between the power supply terminal and an internal ground, as a power supply thereof, an internal ground generation circuit which is provided between the power supply terminal and the ground terminal and which generates the internal ground, an N-channel first MOSFET provided between an output terminal of the internal ground generation circuit and the ground terminal, and a low voltage detection circuit which is provided between the power supply terminal and the ground terminal, and which turns on the first MOSFET upon detecting that a voltage between the power supply terminal and the ground terminal drops below a prescribed voltage.


Find Patent Forward Citations

Nakagawa, Sho. (2022). Semiconductor device (U.S. Patent No. 11283442). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11283442

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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