The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Dec. 04, 2018
Oepic Semiconductors, Inc, Sunnyvale, CA (US);
Yi-Ching Pao, Sunnyvale, CA (US);
Majid Riaziat, Sunnyvale, CA (US);
Ta-Chung Wu, Sunnyvale, CA (US);
Wilson Kyi, Sunnyvale, CA (US);
James Pao, Sunnyvale, CA (US);
OEPIC SEMICONDUCTORS, INC., Sunnyvale, CA (US);
Abstract
A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.