The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Jan. 30, 2020
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Hitoshi Sato, Toyama, JP;

Kazuya Yamada, Toyama, JP;

Hiroki Nagai, Toyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/02 (2006.01); H01S 5/028 (2006.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/44 (2010.01); B28D 5/00 (2006.01); H01S 5/042 (2006.01); H01S 5/32 (2006.01); H01L 21/3065 (2006.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01S 5/0202 (2013.01); B28D 5/0011 (2013.01); H01L 33/0062 (2013.01); H01L 33/16 (2013.01); H01L 33/44 (2013.01); H01S 5/0203 (2013.01); H01S 5/0206 (2013.01); H01S 5/028 (2013.01); H01S 5/0282 (2013.01); H01S 5/22 (2013.01); H01S 5/3432 (2013.01); H01S 5/34353 (2013.01); B28D 5/0023 (2013.01); H01L 21/3065 (2013.01); H01L 33/30 (2013.01); H01S 5/04252 (2019.08); H01S 5/3202 (2013.01); H01S 2301/176 (2013.01); H01S 2304/04 (2013.01);
Abstract

A method of fabricating a semiconductor light-emitting device includes: (a) forming a semiconductor layer including a light-emitting layer on the first surface of a substrate; (b) forming a first trench and a second trench in the semiconductor layer, the first trench extending in a first direction that is parallel to a principal plane of the substrate, and the second trench being disposed inside and parallel to the first trench; (c) forming a third trench parallel to the first trench in the second surface of the substrate opposite to the first surface of the substrate; and (d) forming a semiconductor light-emitting device by dividing the substrate. In (d), an end of at least one divided side of the semiconductor light-emitting device is in the second trench. The first trench has a first width, and the second trench has a second width. The second width is less than the first width.


Find Patent Forward Citations

Sato, Hitoshi. (2022). Method of fabricating semiconductor light-emitting device and semiconductor light-emitting device (U.S. Patent No. 11283233). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11283233

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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