The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Mar. 11, 2021
Applicant:
Enevate Corporation, Irvine, CA (US);
Inventors:
Hong Zhao, Aliso Viejo, CA (US);
Benjamin Yong Park, Mission Viejo, CA (US);
Assignee:
ENEVATE CORPORATION, Irvine, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/134 (2010.01); H01M 10/44 (2006.01); H01M 10/42 (2006.01); H01M 4/38 (2006.01); G01R 31/392 (2019.01);
U.S. Cl.
CPC ...
H01M 4/134 (2013.01); G01R 31/392 (2019.01); H01M 4/386 (2013.01); H01M 10/425 (2013.01); H01M 10/44 (2013.01); H01M 2010/4271 (2013.01);
Abstract
Systems and methods are provided for polarization compensation in silicon-dominant electrode cells. One or more adjustments to operation of a silicon-dominant cell maybe applied based on effects of polarization in the silicon-dominant cell during charge/discharge cycles, with the one or more adjustments configured to compensate for at least some of the effects of polarization in the silicon-dominant cell.