The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Dec. 22, 2016
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Hajime Sasaki, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/00 (2006.01);
U.S. Cl.
CPC ...
H01L 49/003 (2013.01);
Abstract
A semiconductor layer () is provided on a substrate (). A gate electrode (), a source electrode () and a drain electrode () are provided on the semiconductor layer (). A strongly correlated electron system material () is connected between the gate electrode () and the source electrode ().
Sasaki, Hajime. (2022). Compound semiconductor device including mott insulator for preventing device damage due to high-energy particles (U.S. Patent No. 11283021). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11283021
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile