The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Apr. 21, 2017
Applicants:
Centre National DE LA Recherche Scientifique, Paris, FR;
Université DE Strasbourg, Strasbourg, FR;
Inventors:
Abdelilah Slaoui, Truchtersheim, FR;
Pierre Bellanger, Strasbourg, FR;
Alexander Ulyashin, Oslo, NO;
Freddy Syvertsen, Oslo, NO;
Assignees:
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
UNIVERSITÉ DE STRASBOURG, Strasbourg, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0368 (2006.01); H01L 31/028 (2006.01); H01L 31/0392 (2006.01); H01L 31/0232 (2014.01); H01L 31/0288 (2006.01); H01L 31/0747 (2012.01); H01L 31/0224 (2006.01); C30B 29/06 (2006.01); C30B 1/02 (2006.01); H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/56 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
H01L 31/182 (2013.01); C23C 16/24 (2013.01); C23C 16/56 (2013.01); C30B 1/023 (2013.01); C30B 29/06 (2013.01); H01L 21/0245 (2013.01); H01L 21/02425 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01); H01L 31/028 (2013.01); H01L 31/0288 (2013.01); H01L 31/02327 (2013.01); H01L 31/03682 (2013.01); H01L 31/03921 (2013.01); H01L 31/0747 (2013.01); H01L 31/1804 (2013.01); H01L 31/1872 (2013.01); C23C 16/50 (2013.01); H01L 21/02672 (2013.01); H01L 31/022425 (2013.01); Y02E 10/546 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11);
Abstract
The invention relates to a method for manufacturing a semiconductor component comprising a thin layer of crystalline silicon on a substrate, comprising the steps of: