The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Apr. 20, 2018
Applicant:
Oxford University Innovation Limited, Oxford, GB;
Inventors:
Assignee:
OXFORD UNIVERSITY INNOVATION LIMITED, Oxford, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/032 (2006.01); H01L 51/42 (2006.01); H01L 51/50 (2006.01); H01L 33/26 (2010.01); C01G 55/00 (2006.01); H01L 31/0256 (2006.01);
U.S. Cl.
CPC ...
H01L 31/032 (2013.01); C01G 55/005 (2013.01); H01L 33/26 (2013.01); H01L 51/4213 (2013.01); H01L 51/50 (2013.01); C01P 2002/72 (2013.01); C01P 2002/77 (2013.01); C01P 2002/82 (2013.01); C01P 2002/84 (2013.01); C01P 2004/02 (2013.01); C01P 2004/03 (2013.01); C01P 2006/40 (2013.01); H01L 2031/0344 (2013.01); H01L 2251/301 (2013.01);
Abstract
The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising: (a) cesium; (b) palladium; and (c) one or more halide anions [X]. The invention also relates to a layer comprising the semiconducting material. The invention further relates to a process for producing a halometallate compound of formula (IV): [A][M][X], which process uses a H[X] and a compound comprising a sulfoxide group.