The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
May. 31, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Takuma Nanjo, Tokyo, JP;
Tetsuro Hayashida, Tokyo, JP;
Koji Yoshitsugu, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
Provided is a technology for obtaining a drain current of a sufficient magnitude in a field effect transistor using a nitride semiconductor. A channel layer that is AlInGaN is formed on an upper surface of a semiconductor substrate, and on an upper surface of the channel layer, a barrier layer that is AlInGaN having a band gap larger than that of the channel layer is formed. Then, on an upper surface of the barrier layer, a gate insulating film that is an insulator or a semiconductor and has a band gap larger than that of the barrier layer is at least partially formed, and a gate electrode is formed on an upper surface of the gate insulating film. Then, heat treatment is performed while a positive voltage is applied to the gate electrode.