The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Aug. 27, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Yuhki Fujino, Kanazawa Ishikawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A trench MOSFET with first and second electrodes and having first and second semiconductor layers of a first conductivity type, a semiconductor layer of the second conductivity type and a first and second semiconductor region of the first and second conductivity type respectively. A first insulating film and a second insulating film provided between a position of 40% of a height of the second electrode from a lower end of the second electrode and a position of an upper end of the second electrode. The second insulating film has a material with higher dielectric constant than a first insulating material of the first insulating film. The first insulating film disposed in the trench below 40% of the height of the second electrode only contains the first insulating material. A third electrode and interlayer insulating film provided on the second electrode, and a fourth electrode above the interlayer insulating film.