The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

May. 14, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Keunhwi Cho, Seoul, KR;

Byounghak Hong, Seoul, KR;

Myunggil Kang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/161 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/161 (2013.01); H01L 29/1041 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device including an active structure on a substrate, the active structure including silicon germanium patterns and silicon patterns alternately and repeatedly stacked in a vertical direction perpendicular to an upper surface of the substrate; a semiconductor layer on sidewalls of the active structure that face in a first direction parallel to the upper surface of the substrate, the semiconductor layer being a source/drain region; and a gate structure on a surface of the active structure and the substrate, the gate structure extending in a second direction that is perpendicular to the first direction, wherein the silicon germanium patterns are silicon rich-silicon germanium.


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