The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Dec. 09, 2019
Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventors:

Peter J. Zampardi, Newbury Park, CA (US);

Timothy S. Henderson, Portland, OR (US);

Leonard Hayden, Portland, OR (US);

Adrian Hutchinson, Portland, OR (US);

Assignee:

QORVO US, INC., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0821 (2013.01); H01L 29/0817 (2013.01); H01L 29/1004 (2013.01);
Abstract

Disclosed is a transistor having a base, a substrate, and a collector between the substrate and the base. The collector has a first region of a first thickness under the base and is made up of a first dopant type having a substantially constant doping concentration across the first thickness. A second region with a second thickness under the first region is made up of a second dopant type that is different from the first dopant type and has a substantially constant doping concentration across the second thickness. A third region with a third thickness under the second region is made up of the second dopant type with a graded doping concentration that is a function of increasing distance from the second region through the third thickness. An emitter is located over the base opposite the collector.


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