The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Oct. 07, 2019
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Jong Kyu Kim, Ansan-si, KR;

So Ra Lee, Ansan-si, KR;

Yeo Jin Yoon, Ansan-si, KR;

Jae Kwon Kim, Ansan-si, KR;

Joon Sup Lee, Ansan-si, KR;

Min Woo Kang, Ansan-si, KR;

Se Hee Oh, Ansan-si, KR;

Hyun A. Kim, Ansan-si, KR;

Hyoung Jin Lim, Ansan-si, KR;

Assignee:

SEOUL VIOSYS CO., LTD., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/08 (2010.01); H01L 33/38 (2010.01); H01L 33/58 (2010.01); H01L 33/60 (2010.01); H01L 33/64 (2010.01); H01L 33/36 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); H01L 33/08 (2013.01); H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 33/58 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/64 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19107 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.


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