The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

May. 03, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Chang-Bum Kim, Seoul, KR;

Sung-Hoon Kim, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 27/11582 (2017.01); H01L 27/11568 (2017.01); H01L 27/11565 (2017.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/528 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01);
Abstract

A vertical memory device includes a gate line structure including a cell region in which a vertical channel structure is formed, and a first connection region and a second connection region which are respectively arranged at first and second ends of the cell region in a first direction. Each of the first connection region and the second connection region includes a first protrusion of the first gate line and a second protrusion of the second gate line which are parallel to a top surface of the substrate and arranged as steps in a second direction perpendicular to the first direction. The first protrusion of the second connection region is arranged diagonally from the first protrusion of the first connection region with respect to a center line of the cell region which is parallel to the first direction.


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