The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Oct. 12, 2020
Imec Vzw, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Philippe Soussan, Wavre, BE;
Vasyl Motsnyi, Leuven, BE;
Luc Haspeslagh, Lubbeek, BE;
Stefano Guerrieri, Kessel-lo, BE;
Olga Syshchyk, Leuven, BE;
Bernardette Kunert, Wilsele, BE;
Robert Langer, Leuven, BE;
IMEC VZW, Leuven, BE;
Abstract
The present invent provides a method comprising forming a first wafer comprising a first substrate of a group IV semiconductor, and a group III-V semiconductor device structure formed by selective area epitaxial growth on a surface portion of a front side of the first substrate. The method further comprises forming a second wafer comprising a second substrate of a group IV semiconductor, and a group IV semiconductor device structure formed on a front side of the second substrate, and bonding the first wafer to the second wafer with the front side of the first substrate facing the front side of the second wafer.