The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Jun. 19, 2020
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventors:

Rieko Funatsuki, Yokohama, JP;

Takahiko Hara, Yokohama, JP;

Takashi Maeda, Kamakura, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/04 (2006.01); H01L 27/115 (2017.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0483 (2013.01); H01L 27/115 (2013.01);
Abstract

A semiconductor storage apparatus includes a memory cell array including a plurality of memory string structures each including a pair of memory string formation sections each formed by a channel formation film and a charge storage film and including a select gate transistor and a plurality of memory cell transistors connected in series and a partial conductive layer configured to electrically connect the memory string formation sections. During a reading operation of a memory cell transistor, at least one of the plurality of memory cell transistors and the select gate transistor belonging to the memory string formation section is turned off such that a channel of a memory cell transistor is fixed to a potential of a source line or a potential of bit lines.


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