The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

Jun. 11, 2020
Applicant:

Nabtesco Corporation, Tokyo, JP;

Inventors:

Tsutomu Yasui, Tokyo, JP;

Takayuki Jinno, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/30 (2006.01); G05F 1/595 (2006.01); G05F 3/18 (2006.01); H02M 1/08 (2006.01); H02P 27/06 (2006.01); H03K 17/0812 (2006.01); H03K 17/74 (2006.01);
U.S. Cl.
CPC ...
H03K 17/302 (2013.01); G05F 1/595 (2013.01); G05F 3/18 (2013.01); H02M 1/08 (2013.01); H02P 27/06 (2013.01); H03K 17/08122 (2013.01); H03K 17/6871 (2013.01); H03K 17/74 (2013.01);
Abstract

A switching device includes: a lower switching element, an upper switching element having a source connected to a drain of the lower switching element; a control circuit including a first output part that supplies a driving signal to the lower switching element; a Zener diode having a cathode connected to the first output part; a parallel capacitor connected to the Zener diode in parallel; a resistor connected between an anode of the Zener diode and a gate of the lower switching element; and a gate-side capacitor provided separate from a parasitic capacitance of the lower switching element, having a larger capacitance than the parasitic capacitance of the lower switching element, and connected, outside the lower switching element, between the gate and a source of the lower switching element. The capacitance of the gate-side capacitor is smaller than a capacitance of the parallel capacitor.


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