The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Jul. 27, 2018
Applicant:
Comptek Solutions Oy, Turku, FI;
Inventors:
Assignee:
Comptek Solutions Oy, Turku, FI;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 31/0352 (2006.01); H01L 33/00 (2010.01); H01S 5/343 (2006.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01L 21/02483 (2013.01); H01L 21/02565 (2013.01); H01L 21/02609 (2013.01); H01L 31/035236 (2013.01); H01L 33/0062 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01S 5/3407 (2013.01);
Abstract
The present disclosure is related to a semiconductor device and a method of manufacturing the said semiconductor device. The semiconductor device comprising a stacked configuration of a plurality of semiconductor layers. At least one of the semiconductor layers is a III-V compound semiconductor layer, and at least one of the III-V compound semiconductor layers has formed thereonto a corresponding crystalline terminating oxide layer, wherein the at least one of the plurality of semiconductor layers interfaces via its crystalline terminating oxide layer to a neighbouring epitaxial semiconductor layer thereto. The semiconductor device is a quantum well device.