The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

Jan. 14, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seulji Song, Yongin-si, KR;

Jonguk Kim, Yongin-si, KR;

Kyusul Park, Suwon-si, KR;

Woohyun Park, Seoul, KR;

Jonghyun Paek, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1691 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/1253 (2013.01); H01L 45/1675 (2013.01);
Abstract

A semiconductor device includes a plurality of first conductive lines disposed on a substrate, a plurality of second conductive lines intersecting the plurality of first conductive lines, and a plurality of cell structures interposed between the plurality of first conductive lines and the plurality of second conductive lines. At least one among the plurality of cell structures includes a first electrode, a switching element disposed on the first electrode, a second electrode disposed on the switching element, a first metal pattern disposed on the second electrode, a variable resistance pattern interposed between the first metal pattern and at least one among the plurality of second conductive lines, and a first spacer disposed on a sidewall of the variable resistance pattern, a sidewall of the first metal pattern and a sidewall of the second electrode.


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