The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Jun. 25, 2020
Applicant:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Inventors:
Assignee:
THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/24 (2010.01); H01L 27/15 (2006.01); H01L 33/18 (2010.01); H01L 33/08 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 27/15 (2013.01); H01L 27/156 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/007 (2013.01); H01L 33/08 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01);
Abstract
InGaN/GaN quantum layer nanowire light emitting diodes are fabricated into a single cluster capable of exhibiting a wide spectral output range. The nanowires having InGaN/GaN quantum layers formed of quantum dots are tuned to different output wavelengths using different nanowire diameters, for example, to achieve a full spectral output range covering the entire visible spectrum for display applications. The entire cluster is formed using a monolithically integrated fabrication technique that employs a single-step selective area epitaxy growth.