The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

Jul. 20, 2018
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Fabian Kopp, Penang, MY;

Attila Molnar, Penang, MY;

Assignee:

OSRAM OLED GMBH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 31/0224 (2013.01); H01L 31/02327 (2013.01); H01L 31/18 (2013.01); H01L 33/382 (2013.01); H01L 33/46 (2013.01); H01L 2933/0016 (2013.01);
Abstract

An optoelectronic semiconductor chip may include a semiconductor layer sequence provided for generating and/or receiving radiation. The chip may further include a first trench structure and a second trench structure formed in the semiconductor layer sequence. A first contact finger structure may electrically conductively connect the second trench structure to a first semiconductor layer of the semiconductor layer sequence. The first contact finger structure may adjoin a first side surface and/or a second side surface of the second trench structure at least in places. A second contact finger structure may electrically conductively connect to a second semiconductor layer of the semiconductor layer sequence where the second contact finger may be arranged in the first trench structure.


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