The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Dec. 14, 2020
Renesas Electronics Corporation, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
In a Schottky barrier diode region, a Schottky barrier diode is formed between an n-type drift layer and a metal layer, and in a body diode region, a p-type semiconductor region, a p-type semiconductor region, and a p-type semiconductor region are formed in order from a main surface side in the drift layer, and a body diode is formed between the p-type semiconductor region and the drift layer. An impurity concentration of the p-type semiconductor region is decreased lower than the impurity concentration of the p-type semiconductor regions, thereby increasing the reflux current flowing through the Schottky barrier diode and preventing the reflux current from flowing through the body diode.