The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Jun. 18, 2020
Applicant:
Fujitsu Limited, Kawasaki, JP;
Inventors:
Tsuyoshi Takahashi, Ebina, JP;
Kenichi Kawaguchi, Ebina, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H04B 1/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 29/47 (2013.01); H01L 29/66143 (2013.01); H04B 1/16 (2013.01);
Abstract
A semiconductor device includes: a first conductivity type semiconductor of a nanostructure; a first electrode that is in ohmic junction with an end part of the first conductivity type semiconductor; a second electrode that is coupled to the first electrode and is provided over a side surface of the first conductivity type semiconductor; and a depletion constituent that controls expansion of a depletion layer inside the nanostructure, wherein the depletion layer is expanded inside the first conductivity type semiconductor by the depletion constituent in a direction intersecting a movement direction of a carrier.