The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Sep. 08, 2020
North Carolina State University, Raleigh, NC (US);
Bantval Jayant Baliga, Raleigh, NC (US);
North Carolina State University, Raleigh, NC (US);
Abstract
A vertical insulated-gate field effect transistor includes a semiconductor substrate and a gate electrode on a first surface thereof. This gate electrode has a plurality of eight (or more) sided openings extending therethrough. Each of these openings has eight (or more) sidewalls, including a first plurality of sidewalls that are flat relative to a center of the opening and second plurality of sidewalls that are either flat or concave relative to the center of the opening. A source electrode is also provided, which extends into the openings. This source electrode may ohmically contact a source region within the semiconductor substrate. If the field effect transistor is a JBSFET, the source electrode may also form a Schottky rectifying junction with a drift region within the semiconductor substrate.