The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Jan. 16, 2019
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Yuzo Fukuzaki, Kanagawa, JP;
Koji Fukumoto, Kanagawa, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Abstract
A semiconductor device including a structure having N gate electrode layers G and (N−1) channel formation region layers CH (where N≥3) alternately juxtaposed on an insulating material layer formed on a surface of a conductive substrate. Each of the structure, the channel formation region layer CH, and the gate electrode layer G has a bottom surface, a top surface, and four side surfaces. A second surface of the nchannel formation region layer is connected to a fourth surface of the ngate electrode layer. A fourth surface of the nchannel formation region layer is connected to a second surface of the (n+1)gate electrode layer. One of an odd-numbered layer of the gate electrode layers and an even-numbered layer of the gate electrode layers is connected to a first contact portion and the other is connected to a second contact portion.