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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11276734 B1

PDFFull Text
Date of Patent:
Mar. 15, 2022

Filed:

Jul. 01, 2019

Optoelectronic device comprising porous scaffold material and perovskites

Applicant:

Oxford University Innovation Limited, Oxford, GB;

Inventors:

Henry Snaith, Oxfordshire, GB;

Michael Lee, Oxfordshire, GB;

Assignee:

OXFORD UNIVERSITY INNOVATION LIMITED, Oxford, GB;

Attorney:

King & Spalding LLP

Primary Examiner:

Edward J Schmiedel

Int. Cl.
CPC ...
H01L 51/42 (2006.01); H01L 27/32 (2006.01); H01L 51/00 (2006.01); H01L 27/28 (2006.01); H01L 31/032 (2006.01); H01L 31/0256 (2006.01);
U.S. Cl.
CPC ...
H01L 27/32 (2013.01); H01L 27/28 (2013.01); H01L 31/0324 (2013.01); H01L 51/0032 (2013.01); H01L 51/422 (2013.01); H01L 51/4213 (2013.01); H01L 51/4226 (2013.01); H01L 2031/0344 (2013.01); Y02E 10/549 (2013.01);
Abstract

The invention provides an optoelectronic device comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Typically the semiconductor, which may be a perovskite, is disposed on the surface of the porous dielectric scaffold material, so that it is supported on the surfaces of pores within the scaffold. In one embodiment, the optoelectronic device is an optoelectronic device which comprises a photoactive layer, wherein the photo-active layer comprises: (a) said porous dielectric scaffold material; (b) said semiconductor; and (c) a charge transporting material. The invention further provides the use, as a photoactive material in an optoelectronic device, of: (i) a porous dielectric scaffold material; and (ii) a semi-conductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Further provided is the use of a layer comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; as a photoactive layer in an optoelectronic device. In another aspect, the invention provides a photoactive layer for an optoelectronic device comprising (a) a porous dielectric scaffold material; (b) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; and (c) a charge transporting material.

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