The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

Jan. 30, 2020
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventor:

Fumiyoshi Kawashiro, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/14 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49575 (2013.01); H01L 23/142 (2013.01); H01L 23/3672 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/32502 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/73265 (2013.01);
Abstract

A semiconductor device according to embodiments includes a first base material having a first side surface, a first semiconductor chip provided above the first base material, a first insulating plate provided between the first base material and the first semiconductor chip, a first metal plate provided between the first insulating plate and the first semiconductor chip, a first bonding material provided between the first metal plate and the first semiconductor chip, the first bonding material bonding the first metal plate and the first semiconductor chip, a second bonding material provided between the first base material and the first insulating material, the second bonding material bonding the first base material and the first insulating plate, a second base material having a second side surface, a second semiconductor chip provided above the second base material, a second insulating plate provided between the second base material and the second semiconductor chip, a second metal plate provided between the second insulating plate and the second semiconductor chip, a third bonding material provided between the second metal plate and the second semiconductor chip, the third bonding material bonding the second metal plate and the second semiconductor chip, a fourth bonding material provided between the second base material and the second insulating plate, the fourth bonding material bonding the second base material and the second insulating plate, and a first base bonding portion provided between the second side surface and the first side surface and bonded to the first side surface and the second side surface.


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