The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Sep. 20, 2019
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Shairfe Muhammad Salahuddin, Leuven, BE;
Alessio Spessot, Heverlee, BE;
Assignee:
IMEC vzw, Leuven, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/764 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01); H01L 21/0228 (2013.01); H01L 21/02112 (2013.01); H01L 21/31105 (2013.01); H01L 29/515 (2013.01);
Abstract
A method for forming airgaps within an integrated electronic circuit implements a conformal layer and a nanosheet both of boron nitride. The method has advantages for the circuit due to special properties of boron nitride material. In particular, mechanical strength and heat dissipation are increased whereas electro-migration is limited. The method may be applied to the first interconnect layer of the integrated circuit, for reducing additionally capacitive interactions existing between gate electrode structures and source or drain contact structures.