The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Nov. 21, 2018
Applicant:
Seoul National University R&db Foundation, Seoul, KR;
Inventors:
Assignee:
Seoul National University R&DBFoundation, Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
G06N 3/063 (2006.01); G06N 3/08 (2006.01); G11C 11/54 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G06N 3/08 (2013.01); G06N 3/063 (2013.01); G06N 3/0635 (2013.01); G11C 11/54 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0023 (2013.01); H01L 27/2463 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01); G11C 2013/005 (2013.01); G11C 2213/32 (2013.01); G11C 2213/71 (2013.01); G11C 2213/77 (2013.01);
Abstract
A neural network using a cross-point array is provided along with a pattern readout method thereof. Resistive memory devices are stacked vertically to form the neural network as synaptic devices. The connection strength of the signal passing between two neurons is controlled by the positive and negative conductance of the resistive memory devices and it is possible to recognize and readout patterns by learning in the cross-point array.